bdx18 ? bdx18n 05/10/2012 comset semiconductors 1 | 3 p p n n p p s s i i l l i i c c o o n n t t r r a a n n s s i i s s t t o o r r e e p p i i t t a a x x i i a a l l b b a a s s e e lf large signal power amplification high current switching thermal fatigue inspection compliance to rohs applications : ? series and shunt regulators ? high fidelity amplifiers ? power-switching circuits ? solenoid drivers absolute maximum ratings symbol ratings value unit v ceo collector-emitter voltage bdx18 -60 v bdx18n v cer collector-emitter voltage r be =100 ? bdx18 -70 v bdx18n -65 v ebo collector-emitter voltage bdx18 -7 v bdx18n v cbo emitter-base voltage bdx18 -100 v bdx18n -70 v cex collector-emitter voltage v be =+1.5 v bdx18 -90 v bdx18n -70 i c collector current bdx18 -15 a bdx18n i b base current bdx18 -7 a bdx18n p t power dissipation @ t c = 25 117 w t j junction temperature -65 to +200 c t s storage temperature
bdx18 ? bdx18n 05/10/2012 comset semiconductors 2 | 3 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo(sus) collector-emitter breakdown voltage (*) i c =200 ma i b =0 bdx18 -60 -60 - - v bdx18n v cex(sus) collector-emitter breakdown voltage (*) i c =-100 ma v be =1.5 v bdx18 -90 - - v bdx18n -70 - - v cer(sus) collector-emitter breakdown voltage (*) i c =-200 ma r be =100 ? bdx18 -70 - - v bdx18n -65 - - i cex collector-emitter cutoff current v ce =-90 v v be =1.5 v bdx18 - - -5 ma v ce =-60 v, v be =1.5 v t case =150c -10 v ce =-70 v v be =1.5 v bdx18n - - -5 v ce =-60 v, v be =1.5 v t case =150c - - -10 i ebo emitter-base cutoff current v eb =-7 v bdx18 - - -5 ma bdx18n v be base-emitter voltage (*) i c =-4.0 a, v ce =-4.0v bdx18 - - -1.8 v bdx18n v ce(sat) collector-emitter saturation voltage i c =-4.0 a, i b =-0.4v bdx18 - - -1.1 v bdx18n f t transition frequency i c =-1a, v ce =-10 v f=1 mhz bdx18 - 4 - mhz bdx18n h 21e static forward current transfer ratio (*) v ce =-4.0 v, i c =-4.0 a bdx18 20 - 70 - bdx18n (*) pulse width 300 s, duty cycle 2.0% (1) collector-emitter voltage limited et v ceci = v rated by an auxiliary circuit
bdx18 ? bdx18n 05/10/2012 comset semiconductors 3 | 3 mechanical data case to-3 revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
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